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APT5F100K
1000V, 5A 2.8 Max, Trr 155nS
N-Channel FREDFET
POWER MOS 8(R) is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
TO-220
APT5F100K
D
Single die FREDFET
G S
FEATURES
* Fast switching with low EMI * Low trr for high reliability * Ultra low Crss for improved noise immunity * Low gate charge * Avalanche energy rated * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full bridge * Half bridge * PFC and other boost converter * Buck converter * Single and two switch forward * Flyback
Absolute Maximum Ratings
Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive
1
Ratings 5 3 20 30 310 3
Unit
A
V mJ A
Thermal and Mechanical Characteristics
Symbol PD RJC RCS TJ,TSTG TL WT Characteristic Total Power Dissipation @ TC = 25C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) Package Weight 0.22 6.2 10 1.1 -55 0.15 150 300 Min Typ Max 225 0..35 Unit W C/W
C
5-2009 050-8164 Rev B
oz g in*lbf N*m
Torque
Mounting Torque ( TO-247 Package), 4-40 or M3 screw
Microsemi Website - http://www.microsemi.com
Static Characteristics
Symbol
VBR(DSS) VBR(DSS)/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS
TJ = 25C unless otherwise specified
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 250A VGS = 10V, ID = 3A VGS = VDS, ID = 0.5mA VDS = 500V VGS = 0V TJ = 25C TJ = 125C
APT5F100K
Typ 1.15 2.4 4 -10 Max Unit V V/C V mV/C A nA
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance
3
Min 1000
Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current
2.5
2.8 5 250 1000 100
VGS = 30V
Dynamic Characteristics
Symbol
gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf
4
TJ = 25C unless otherwise specified
Test Conditions
VDS = 50V, ID = 3A VGS = 0V, VDS = 25V f = 1MHz
Parameter
Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related
Min
Typ 5.6 1409 19 118 48
Max
Unit S
pF
VGS = 0V, VDS = 0V to 500V
5
Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time
VGS = 0 to 10V, ID = 6A, VDS = 500V Resistive Switching VDD = 666V, ID = 3 RG = 2.2 6 , VGG = 15V
25 43 7.6 21 23 21 72 21 nC
ns
Source-Drain Diode Characteristics
Symbol
IS ISM VSD trr Qrr Irrm dv/dt
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt
Test Conditions
MOSFET symbol showing the integral reverse p-n junction diode (body diode)
Min
D
Typ
Max 5.4
Unit
G S
A 20 1.3 155 247 V ns C A 25 V/ns
ISD = 3A, TJ = 25C, VGS = 0V TJ = 25C TJ = 125C ISD = 3A 3 diSD/dt = 100A/s VDD = 100V TJ = 25C TJ = 125C TJ = 25C TJ = 125C ISD 3A, di/dt 1000A/s, VDD = 400V, TJ = 125C
130 199 0.4 0.8 6 8
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25C, L = 69mH, RG = 25, IAS = 3A. 3 Pulse test: Pulse Width < 380s, duty cycle < 2%.
Rev B 5-2009
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -3.43E-8/VDS^2 + 1.44E-8/VDS + 5.38E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
050-8164
APT5F100K
16
V
GS
6
= 10V T = 125C
J
14
TJ = -55C
5 ID, DRIAN CURRENT (A)
V
GS
ID, DRAIN CURRENT (A)
12 10 8
TJ = 25C
= 6, 7, 8 & 9V
4
3
5V
6 4 2 0
TJ = 125C TJ = 150C
2
1 0
4.5V
0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure 1, Output Characteristics
0
5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
3.0
NORMALIZED TO VGS = 10V @ 3A
20
VDS> ID(ON) x RDS(ON) MAX.
18 16 ID, DRAIN CURRENT (A) 14 12 10 8 6 4 2
2.5
250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
2.0
1.5
TJ = -55C TJ = 25C TJ = 125C
1.0
0.5 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 3, RDS(ON) vs Junction Temperature 8 7
0
0
1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics
3,000 1,000 C, CAPACITANCE (pF) Ciss
gfs, TRANSCONDUCTANCE
TJ = -55C TJ = 25C
6 5 4 3 2 1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 3.5
TJ = 125C
100 Coss 10 Crss 200 400 600 800 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 20 1 0
16 VGS, GATE-TO-SOURCE VOLTAGE (V) 14 12
ID = 3A
ISD, REVERSE DRAIN CURRENT (A)
18 16 14 12 10 8 6 4 2 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 0 0
TJ = 150C TJ = 25C
VDS = 200V
10
VDS = 500V
8 6
VDS = 800V
4 2 10 20 30 40 50 60 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 0 0
050-8164
Rev B
5-2009
APT5F100K
40 40
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
10
IDM
10
IDM Rds(on) 13s 100s 1ms 10ms TJ = 150C 100ms TC = 25C DC line Scaling for Different Case & Junction Temperatures: ID = ID(T = 25C)*(TJ - TC)/125
C
13s 100s
1
Rds(on)
1ms 10ms 100ms DC line
1
0.1
TJ = 125C TC = 75C
1
10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area
0.1
10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area
1
0.60 D = 0.9 0.50 0.7
ZJC, THERMAL IMPEDANCE (C/W)
0.40
0.30
0.5
Note:
PDM
t1 t2
0.20
0.3 SINGLE PULSE
t1 = Pulse Duration Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
0.10
0.1 0.05
0
10
-5
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
10-4
1.0
TO-220 (K) Package Outline
e3 100% Sn Plated
1.39 (.055) 0.51 (.020)
Drain
10.66 (.420) 9.66 (.380) 5.33 (.210) 4.83 (.190) 6.85 (.270) 5.85 (.230)
12.192 (.480) 9.912 (.390)
3.42 (.135) 2.54 (.100)
4.08 (.161) Dia. 3.54 (.139)
3.683 (.145) MAX.
Rev B 5-2009
0.50 (.020) 0.41 (.016) 2.92 (.115) 2.04 (.080) 4.82 (.190) 3.56 (.140)
14.73 (.580) 12.70 (.500)
Gate Drain Source
1.01 (.040) 3-Plcs. 0.83 (.033) 2.79 (.110) 2.29 (.090) 5.33 (.210) 4.83 (.190)
1.77 (.070) 3-Plcs. 1.15 (.045)
050-8164
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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